Description
FRAM is non-volatile and can easily be read/written 10 trillion times. It’s similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
You’re probably familiar with SRAM, DRAM, EEPROM and Flash but what about FRAM? FRAM is ‘ferroelectric’ RAM, which has some very interesting and useful properties. Unlike SRAM, FRAM does not lose the data when power is lost. In that sense it’s a durable storage memory chip like Flash. However, it is much faster than Flash – and you don’t have to deal with writing or erasing pages.
This particular FRAM chip has 256 Kbits (32 KBytes) of storage, interfaces using I2C, and can run at up to 1MHz I2C rates. Each byte can be read and written instantaneously (like SRAM) but will keep the memory for 95 years at room temperature. Each byte can be read/written 10,000,000,000,000 times so you don’t have to worry too much about wear leveling. With the best of SRAM and Flash combined, this chip can let you buffer fairly-high speed data without worrying about data-loss.
Specifications:
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
