IRF830 Power MOSFET N-Channel 4.5A 500V IR TO-220 COM23, R32

Fr1,000

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and
computer monitor power supplies,d.c. to d.c. converters, motor control circuits and general purpose switching applications.

In stock

SKU: CPN7630 Category:

Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.

Features
• 4.5A, 500V
• RDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature

Datasheet

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