E35 (50N06) COM22 , R33

Fr600

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. „

In stock

SKU: CPN1033 Category:

Description

„ DESCRIPTION

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. „

FEATURES

  • RDS(ON) = 23mΩ@VGS = 10 V
  •  Ultra low gate charge ( typical 30 nC )
  •  Low reverse transfer Capacitance ( CRSS = typical 80 pF )
  •  Fast switching capability
  •  100% avalanche energy specified
  •  Improved dv/dt capability

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