Description
MMBT5401 is a PNP surface mount epitaxial Silicon Transistor designed as a general-purpose amplifier and switch for applications requiring high voltage with -55 to 150°C Operating junction temperature range.This device is designed for high voltage driver applications.
Features:
- Collector-Base Voltage (VCBO): 160 V
- Collector-Emitter Voltage (VCEO):150 V
- Emitter-Base Voltage (VEBO):5 V
- Collector Current (Ic): 500 mA
- Power Dissipation (Pd) up to TA=25°C : 250 mW
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